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| N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H337 SWITCHING AND AMPLFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS Storage Temperature - - - - - Junction Temperature - - - - - - Collector Dissipation- - - Collector-Base Voltage- - - - - - Collector-Emitter Voltage- - - - - Emitter-Base Voltage - - - - - - - - - - - Collector Current - - - - - - - Suitable for AF-Driver stages and low power output stages T stg Tj PC Ta=25ae(c) -55~150ae 150ae 625mW 50V 45V 5V 800mA TO-92 VCBO VCEO V EB O IC 1D Collector C 2D Base B 3D Emitter E ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Ta=25ae(c) Typ Max Unit Test Conditions Symbol Min BVCBO BVCEO BVEBO ICES HFE VCE(sat) VBE(ON) fT Ccbo 50 45 5 2 100 100 630 0.7 1.2 100 12 V V V nA V V MHz pF IC=100|I IE=100|I A, IE=0 A IC=0 IC=10mA, IB=0 VCE=45V, VBE=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=5V, IC=10mA VCB=10V, IE=0 F=1MHz DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Collector-Base Capacitance hFE Classification 16 100 250 160 25 400 250 40 630 N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H337 |
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